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IRF6702M2DTR1PBF Технические параметры

Infineon Technologies  IRF6702M2DTR1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MA
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 15A
Number of Elements 2 Elements
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Position BOTTOM
Terminal Form NO LEAD
Reach Compliance Code compliant
JESD-30 Code R-XBCC-N4
Свойство продукта Значение свойства
Qualification Status Not Qualified
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 2.7W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 15A
Drain-source On Resistance-Max 0.0066Ohm
Pulsed Drain Current-Max (IDM) 130A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 71 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Просмотр сходства

IRF6702M2DTR1PBF Документы

IRF6702M2DTR1PBF brand manufacturers: Infineon Technologies, Anli stock, IRF6702M2DTR1PBF reference price.Infineon Technologies. IRF6702M2DTR1PBF parameters, IRF6702M2DTR1PBF Datasheet PDF and pin diagram description download.You can use the IRF6702M2DTR1PBF Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IRF6702M2DTR1PBF pin diagram and circuit diagram and usage method of function,IRF6702M2DTR1PBF electronics tutorials.You can download from the Anli.