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IRF6710S2TR1PBF Технические параметры

Infineon Technologies  IRF6710S2TR1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric S1
Number of Pins 6Pins
Supplier Device Package DIRECTFET S1
Current - Continuous Drain (Id) @ 25℃ 12A Ta 37A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.8W Ta 15W Tc
Turn Off Delay Time 5.2 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 5.9MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Power Dissipation 1.8W
Turn On Delay Time 7.9 ns
FET Type N-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 5.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 20ns
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Input Capacitance 1.19nF
Recovery Time 21 ns
Drain to Source Resistance 11.9mOhm
Rds On Max 5.9 mΩ
Nominal Vgs 1.8 V
Height 558.8μm
Length 4.826mm
Width 3.95mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF6710S2TR1PBF Документы

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