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IRF6723M2DTR1P Технические параметры
Infineon Technologies IRF6723M2DTR1P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | DirectFET™ Isometric MA | |
| Surface Mount | YES | |
| Current - Continuous Drain (Id) @ 25℃ | 15A | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2009 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Reach Compliance Code | compliant | |
| Base Part Number | IRF6723M2DPBF |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 2.7W | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 6.6m Ω @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Drain Current-Max (Abs) (ID) | 47A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 25W | |
| FET Feature | Logic Level Gate | |
| RoHS Status | RoHS Compliant |
IRF6723M2DTR1P Документы
- DatasheetsIRF6723M2DTR(1)PbF
- Other Related DocumentsIR Part Numbering System
- PCN Obsolescence/ EOLMultiple Devices 20/Dec/2013
- PCN Assembly/OriginDirectFET Backend Wafer Processing 23/Oct/2013
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