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IRF6775MTR1PBF Технические параметры

Infineon Technologies  IRF6775MTR1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MZ
Number of Pins 7Pins
Current - Continuous Drain (Id) @ 25℃ 4.9A Ta 28A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.8W Ta 89W Tc
Turn Off Delay Time 5.8 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 56MOhm
Element Configuration Dual
Power Dissipation 89W
Свойство продукта Значение свойства
Turn On Delay Time 5.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 56m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1411pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 7.8ns
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 28A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Nominal Vgs 5 V
Height 508μm
Length 5.45mm
Width 5.05mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF6775MTR1PBF Документы

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