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Infineon Technologies IRF6811STR1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | DirectFET™ Isometric SQ | |
| Number of Pins | 6Pins | |
| Supplier Device Package | DIRECTFET™ SQ | |
| Current - Continuous Drain (Id) @ 25℃ | 19A Ta 74A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.1W Ta 32W Tc | |
| Turn Off Delay Time | 11 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2011 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Resistance | 3.7MOhm | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -40°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 2.1W | |
| Turn On Delay Time | 8.7 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 19A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 35μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1590pF @ 13V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | |
| Rise Time | 19ns | |
| Drain to Source Voltage (Vdss) | 25V | |
| Vgs (Max) | ±16V | |
| Fall Time (Typ) | 5.5 ns | |
| Continuous Drain Current (ID) | 74A | |
| Gate to Source Voltage (Vgs) | 16V | |
| Drain to Source Breakdown Voltage | 25V | |
| Input Capacitance | 1.59nF | |
| Drain to Source Resistance | 5.4mOhm | |
| Rds On Max | 3.7 mΩ | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |