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Infineon Technologies IRF6811STRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | DirectFET™ Isometric SQ | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 19A Ta 74A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.1W Ta 32W Tc | |
| Turn Off Delay Time | 11 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2005 | |
| JESD-609 Code | e1 | |
| Part Status | Last Time Buy | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 3.7MOhm | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-XBCC-N2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.1W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 8.7 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 3.7m Ω @ 19A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 35μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1590pF @ 13V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | |
| Rise Time | 19ns | |
| Vgs (Max) | ±16V | |
| Fall Time (Typ) | 5.5 ns | |
| Continuous Drain Current (ID) | 19A | |
| Gate to Source Voltage (Vgs) | 16V | |
| Drain Current-Max (Abs) (ID) | 74A | |
| Drain to Source Breakdown Voltage | 25V | |
| Avalanche Energy Rating (Eas) | 32 mJ | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 700μm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |