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IRF7210PBF Технические параметры

Infineon Technologies  IRF7210PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Supplier Device Package 8-SO
Current - Continuous Drain (Id) @ 25℃ 16A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 6.5 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 7mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Power Dissipation 2.5W
Turn On Delay Time 50 ns
FET Type P-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 17179pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 212nC @ 5V
Rise Time 3ns
Drain to Source Voltage (Vdss) 12V
Vgs (Max) ±12V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) -16A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -12V
Dual Supply Voltage 12V
Input Capacitance 17.179nF
Recovery Time 247 ns
Drain to Source Resistance 7mOhm
Rds On Max 7 mΩ
Nominal Vgs 600 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF7210PBF Документы

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