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Infineon Technologies IRF7233TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Supplier Device Package | 8-SO | |
| Current - Continuous Drain (Id) @ 25℃ | 9.5A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.5W Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | -12V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | -9.5A | |
| Power Dissipation | 2.5W | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 600mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 5V | |
| Rise Time | 540ns | |
| Drain to Source Voltage (Vdss) | 12V | |
| Vgs (Max) | ±12V | |
| Continuous Drain Current (ID) | -9.5A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | -12V | |
| Input Capacitance | 6nF | |
| Drain to Source Resistance | 20mOhm | |
| Rds On Max | 20 mΩ | |
| Nominal Vgs | 12 V | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |