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Infineon Technologies IRF7316TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 4.9A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 34 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2004 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 58mOhm | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Current Rating | -4.9A | |
| Base Part Number | IRF7316PBF | |
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 2W | |
| Turn On Delay Time | 13 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 58m Ω @ 4.9A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
| Rise Time | 13ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 32 ns | |
| Continuous Drain Current (ID) | -4.9A | |
| Threshold Voltage | -1V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -30V | |
| Pulsed Drain Current-Max (IDM) | 30A | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Recovery Time | 66 ns | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | -1 V | |
| Height | 1.75mm | |
| Length | 4.9784mm | |
| Width | 3.9878mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead, Lead Free |