Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IRF7321D2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 4.7A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2W Ta | |
| Turn Off Delay Time | 34 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | FETKY™ | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Resistance | 62mOhm | |
| Voltage - Rated DC | -30V | |
| Current Rating | -4.7A | |
| Element Configuration | Single |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Turn On Delay Time | 13 ns | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 62m Ω @ 4.9A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
| Rise Time | 13ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 32 ns | |
| Continuous Drain Current (ID) | 4.7A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -30V | |
| FET Feature | Schottky Diode (Isolated) | |
| Height | 1.4986mm | |
| Length | 4.9784mm | |
| Width | 3.9878mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |