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IRF7324TRPBF Технические параметры
Infineon Technologies IRF7324TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 9A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 170 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 18mOhm | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| Voltage - Rated DC | -20V | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -9A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | IRF7324PBF |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Turn On Delay Time | 17 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 9A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2940pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 5V | |
| Rise Time | 36ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 190 ns | |
| Continuous Drain Current (ID) | -9A | |
| Threshold Voltage | -1V | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 9A | |
| Drain to Source Breakdown Voltage | -20V | |
| Pulsed Drain Current-Max (IDM) | 71A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Recovery Time | 270 ns | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Height | 1.75mm | |
| Length | 4.9784mm | |
| Width | 3.9878mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead, Lead Free |
Индекс :
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