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IRF7328TRPBF Технические параметры
Infineon Technologies IRF7328TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 8A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 198 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Resistance | 21MOhm | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Current Rating | -8A | |
| Base Part Number | IRF7328PBF | |
| Row Spacing | 6.3 mm | |
| Number of Channels | 2Channels |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Turn On Delay Time | 13 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 21m Ω @ 8A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2675pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V | |
| Rise Time | 15ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 98 ns | |
| Continuous Drain Current (ID) | -8A | |
| Threshold Voltage | -1V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 8A | |
| Drain to Source Breakdown Voltage | -30V | |
| Dual Supply Voltage | -30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Recovery Time | 56 ns | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | -2.5 V | |
| Height | 1.75mm | |
| Length | 4.9784mm | |
| Width | 3.9878mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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