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IRF7329TRPBF Технические параметры

Infineon Technologies  IRF7329TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 340 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Voltage - Rated DC -12V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -9.2A
Base Part Number IRF7329PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2W
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 260 ns
Continuous Drain Current (ID) 9.2A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.017Ohm
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7329TRPBF Документы

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