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Infineon Technologies IRF7341GTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2005 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Max Power Dissipation | 2.4W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PDSO-G8 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 2.4W | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 5.1A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA (Min) | |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V | |
| Drain to Source Voltage (Vdss) | 55V | |
| Continuous Drain Current (ID) | 5.1A | |
| JEDEC-95 Code | MS-012AA | |
| Drain-source On Resistance-Max | 0.05Ohm | |
| Pulsed Drain Current-Max (IDM) | 42A | |
| DS Breakdown Voltage-Min | 55V | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant |