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Infineon Technologies IRF7341QTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Supplier Device Package | 8-SO | |
| Current - Continuous Drain (Id) @ 25℃ | 5.1A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 31 ns | |
| Packaging | Cut Tape (CT) | |
| Series | HEXFET® | |
| Published | 2005 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 2.4W | |
| Base Part Number | IRF7341QPBF | |
| Power Dissipation | 2.4W | |
| Turn On Delay Time | 9.2 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power - Max | 2.4W | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA (Min) | |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V | |
| Rise Time | 7.7ns | |
| Drain to Source Voltage (Vdss) | 55V | |
| Fall Time (Typ) | 12.5 ns | |
| Continuous Drain Current (ID) | 4.7A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Input Capacitance | 780pF | |
| FET Feature | Logic Level Gate | |
| Drain to Source Resistance | 65mOhm | |
| Rds On Max | 50 mΩ | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |