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Infineon Technologies IRF7342QTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 30 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 3.4A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 43 ns | |
| Packaging | Cut Tape (CT) | |
| Series | HEXFET® | |
| Published | 2014 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 2W | |
| Base Part Number | IRF7342QPBF |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 2W | |
| Turn On Delay Time | 14 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 105m Ω @ 3.4A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V | |
| Rise Time | 10ns | |
| Drain to Source Voltage (Vdss) | 55V | |
| Fall Time (Typ) | 22 ns | |
| Continuous Drain Current (ID) | -3.4A | |
| Gate to Source Voltage (Vgs) | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Height | 1.4986mm | |
| Length | 4.9784mm | |
| Width | 3.9878mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |