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IRF7353D1 Технические параметры

Infineon Technologies  IRF7353D1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Current - Continuous Drain (Id) @ 25℃ 6.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 2W Ta
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series FETKY™
Published 2004
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
FET Feature Schottky Diode (Isolated)
RoHS Status Non-RoHS Compliant

IRF7353D1 Документы

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