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IRF7353D1TRPBF Технические параметры

Infineon Technologies  IRF7353D1TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Supplier Device Package 8-SO
Current - Continuous Drain (Id) @ 25℃ 6.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2W Ta
Turn Off Delay Time 26 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FETKY™
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Current Rating 6.5A
Power Dissipation 2W
Свойство продукта Значение свойства
Turn On Delay Time 8.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 8.9ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 650pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 46mOhm
Rds On Max 32 mΩ
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF7353D1TRPBF Документы

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