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IRF7379TRPBF Технические параметры

Infineon Technologies  IRF7379TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.8A 4.3A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 5.8A
Свойство продукта Значение свойства
Base Part Number IRF7379PBF
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 46A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7379TRPBF Документы

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