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IRF7404TRPBF Технические параметры

Infineon Technologies  IRF7404TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6.7A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.7V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 40mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -6.7A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
Row Spacing 6.3 mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 14 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 32ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) -6.7A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5.3A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Recovery Time 100 ns
Nominal Vgs -700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7404TRPBF Документы

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