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Infineon Technologies IRF7455PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 22 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 15A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.5W Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 7.5m Ω @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3480pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 5V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±12V | |
| JEDEC-95 Code | MS-012AA | |
| Drain Current-Max (Abs) (ID) | 15A | |
| Drain-source On Resistance-Max | 0.0075Ohm | |
| Pulsed Drain Current-Max (IDM) | 120A | |
| DS Breakdown Voltage-Min | 30V | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| RoHS Status | ROHS3 Compliant |