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IRF7456TRPBF Технические параметры

Infineon Technologies  IRF7456TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 16A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.8V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 50 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 6.5mOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC 20V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 16A
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3640pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Rise Time 25ns
Vgs (Max) ±12V
Fall Time (Typ) 52 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Avalanche Energy Rating (Eas) 250 mJ
Recovery Time 72 ns
Nominal Vgs 2 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7456TRPBF Документы

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