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IRF7480MTRPBF Технические параметры

Infineon Technologies  IRF7480MTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric ME
Number of Pins 10Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 217A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 96W Tc
Turn Off Delay Time 68 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®, StrongIRFET™
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N6
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 132A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6680pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Fall Time (Typ) 58 ns
Continuous Drain Current (ID) 217A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 868A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 206 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7480MTRPBF Документы

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