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IRF7504TRPBF Технические параметры

Infineon Technologies  IRF7504TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.7A
Number of Elements 2 Elements
Turn Off Delay Time 38 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1997
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8Terminations
Resistance 270mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Current Rating -1.7A
Base Part Number IRF7504PBF
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 9.1 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 43 ns
Continuous Drain Current (ID) -1.7A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 9.6A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 860μm
Length 3mm
Width 3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7504TRPBF Документы

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