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IRF7507PBF Технические параметры

Infineon Technologies  IRF7507PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8Pins
Current - Continuous Drain (Id) @ 25℃ 2.4A 1.7A
Number of Elements 2 Elements
Packaging Tube
Series HEXFET®
Published 1998
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.25W
Terminal Form GULL WING
Base Part Number IRF7507PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Свойство продукта Значение свойства
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 1.7A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 2.4A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 1.3A
Drain-source On Resistance-Max 0.14Ohm
Pulsed Drain Current-Max (IDM) 19A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Height 910μm
Length 3.05mm
Width 3.05mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

IRF7507PBF Документы

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