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IRF7524D1PBF Технические параметры

Infineon Technologies  IRF7524D1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8Pins
Current - Continuous Drain (Id) @ 25℃ 1.7A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.7V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1.25W Ta
Turn Off Delay Time 38 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series FETKY™
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation 1.25W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Fall Time (Typ) 43 ns
Continuous Drain Current (ID) -1.7A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
RoHS Status RoHS Compliant

IRF7524D1PBF Документы

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