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Infineon Technologies IRF7526D1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | |
| Number of Pins | 8Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 2A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1.25W Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | FETKY™ | |
| Published | 2005 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Power Dissipation | 800mW | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 1.2A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | -2A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -30V | |
| FET Feature | Schottky Diode (Isolated) | |
| RoHS Status | RoHS Compliant |