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IRF7526D1PBF Технические параметры

Infineon Technologies  IRF7526D1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8Pins
Current - Continuous Drain (Id) @ 25℃ 2A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.25W Ta
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series FETKY™
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation 800mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Continuous Drain Current (ID) -2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Feature Schottky Diode (Isolated)
RoHS Status RoHS Compliant

IRF7526D1PBF Документы

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