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IRF7526D1TR Технические параметры
Infineon Technologies IRF7526D1TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | |
| Surface Mount | YES | |
| Current - Continuous Drain (Id) @ 25℃ | 2A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Power Dissipation (Max) | 1.25W Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | FETKY™ | |
| Published | 1999 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Configuration | Single | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 1.2A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| Drain Current-Max (Abs) (ID) | 2A | |
| FET Feature | Schottky Diode (Isolated) | |
| RoHS Status | Non-RoHS Compliant |
IRF7526D1TR Документы
- Other Related DocumentsIR Part Numbering System
- PCN Obsolescence/ EOLEOL122B 02/Oct/2007
- Datasheets
Индекс :
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