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IRF7726TRPBF Технические параметры

Infineon Technologies  IRF7726TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.79W Ta
Turn Off Delay Time 227 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2000
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 26mOhm
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC -30V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -7A
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.79W
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2204pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 107 ns
Continuous Drain Current (ID) -7A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage -30V
Nominal Vgs -2.5 V
Height 910μm
Length 3.048mm
Width 3.048mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRF7726TRPBF Документы

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