Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IRF7749L2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | DirectFET™ Isometric L8 | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Manufacturer Package Identifier | IRF7749L2TRPBF | |
| Current - Continuous Drain (Id) @ 25℃ | 33A Ta 375A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.3W Ta 125W Tc | |
| Turn Off Delay Time | 72 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2009 | |
| JESD-609 Code | e1 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 9Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-XBCC-N9 | |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 3.8W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 29 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.5m Ω @ 120A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 12320pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V | |
| Rise Time | 43ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 39 ns | |
| Continuous Drain Current (ID) | 33A | |
| Threshold Voltage | 4V | |
| Gate to Source Voltage (Vgs) | 60V | |
| Drain Current-Max (Abs) (ID) | 375A | |
| Drain to Source Breakdown Voltage | 60V | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Max Junction Temperature (Tj) | 175°C | |
| Nominal Vgs | 2.9 V | |
| Height | 740μm | |
| Length | 9.144mm | |
| Width | 7.112mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |