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IRF7749L2TRPBF Технические параметры

Infineon Technologies  IRF7749L2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Number of Pins 8Pins
Transistor Element Material SILICON
Manufacturer Package Identifier IRF7749L2TRPBF
Current - Continuous Drain (Id) @ 25℃ 33A Ta 375A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.3W Ta 125W Tc
Turn Off Delay Time 72 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2009
JESD-609 Code e1
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-XBCC-N9
Configuration SINGLE WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5m Ω @ 120A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12320pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 43ns
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 60V
Drain Current-Max (Abs) (ID) 375A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 260 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs 2.9 V
Height 740μm
Length 9.144mm
Width 7.112mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

IRF7749L2TRPBF Документы

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