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IRF7755 Технические параметры

Infineon Technologies  IRF7755 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 89 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature HIGH RELIABILITY
Voltage - Rated DC -20V
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3.7A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
Power - Max 1W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 51m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 13ns
Fall Time (Typ) 61 ns
Continuous Drain Current (ID) 3.9A
JEDEC-95 Code MO-153AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.051Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1mm
Length 3mm
Width 4.4mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

IRF7755 Документы

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