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IRF7757TRPBF Технические параметры

Infineon Technologies  IRF7757TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Supplier Device Package 8-TSSOP
Current - Continuous Drain (Id) @ 25℃ 4.8A
Turn Off Delay Time 36 ns
Number of Elements 2 Elements
Published 2005
Series HEXFET®
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.2W
Element Configuration Dual
Power Dissipation 1.2W
Turn On Delay Time 9.5 ns
Свойство продукта Значение свойства
Power - Max 1.2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 35mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time 9.2ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 4.8A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 1.34nF
FET Feature Logic Level Gate
Drain to Source Resistance 35mOhm
Rds On Max 35 mΩ
Nominal Vgs 1.2 V
RoHS Status RoHS Compliant
Radiation Hardening No
REACH SVHC No SVHC

IRF7757TRPBF Документы

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