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Infineon Technologies IRF7757TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) | |
| Mounting Type | Surface Mount | |
| Mount | Surface Mount | |
| Number of Pins | 8Pins | |
| Supplier Device Package | 8-TSSOP | |
| Current - Continuous Drain (Id) @ 25℃ | 4.8A | |
| Turn Off Delay Time | 36 ns | |
| Number of Elements | 2 Elements | |
| Published | 2005 | |
| Series | HEXFET® | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | SMD/SMT | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 1.2W | |
| Element Configuration | Dual | |
| Power Dissipation | 1.2W | |
| Turn On Delay Time | 9.5 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power - Max | 1.2W | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V | |
| Rise Time | 9.2ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 14 ns | |
| Continuous Drain Current (ID) | 4.8A | |
| Threshold Voltage | 1.2V | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | 20V | |
| Dual Supply Voltage | 20V | |
| Input Capacitance | 1.34nF | |
| FET Feature | Logic Level Gate | |
| Drain to Source Resistance | 35mOhm | |
| Rds On Max | 35 mΩ | |
| Nominal Vgs | 1.2 V | |
| RoHS Status | RoHS Compliant | |
| Radiation Hardening | No | |
| REACH SVHC | No SVHC |