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IRF7759L2TRPBF Технические параметры

Infineon Technologies  IRF7759L2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Number of Pins 11Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 26A Ta 375A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.3W Ta 125W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2009
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N9
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3m Ω @ 96A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12222pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 87ns
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0023Ohm
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 257 mJ
Height 508μm
Length 9.144mm
Width 7.112mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7759L2TRPBF Документы

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