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IRF7769L1TRPBF Технические параметры

Infineon Technologies  IRF7769L1TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Number of Pins 15Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 20A Ta 124A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.3W Ta 125W Tc
Turn Off Delay Time 92 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9Terminations
ECCN Code EAR99
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 44 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 74A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) 124A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 375A
Drain-source On Resistance-Max 0.0035Ohm
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 260 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7769L1TRPBF Документы

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