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IRF7779L2TRPBF Технические параметры

Infineon Technologies  IRF7779L2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Package / Case DirectFET™ Isometric L8
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 11Pins
Transistor Element Material SILICON
Turn Off Delay Time 36 ns
Power Dissipation (Max) 3.3W Ta 125W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 375A Tc
Published 2009
Series HEXFET®
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N9
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 19ns
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 67A
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 270A
Avalanche Energy Rating (Eas) 270 mJ
Width 7.1mm
Length 9.144mm
Height 508μm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

IRF7779L2TRPBF Документы

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