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IRF7855TRPBF Технические параметры

Infineon Technologies  IRF7855TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 16 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 9.4MOhm
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 8.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.4m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 13ns
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 97A
Avalanche Energy Rating (Eas) 540 mJ
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7855TRPBF Документы

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