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IRF7862TRPBF Технические параметры

Infineon Technologies  IRF7862TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 21A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Turn Off Delay Time 18 ns
Power Dissipation (Max) 2.5W Ta
Number of Elements 1 Element
Published 2007
Series HEXFET®
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 3.3MOhm
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4090pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Rise Time 19ns
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 350 mJ
Nominal Vgs 2.35 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Lead Free Lead Free

IRF7862TRPBF Документы

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