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IRF7910PBF Технические параметры

Infineon Technologies  IRF7910PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 16 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Voltage - Rated DC 12V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 10A
Base Part Number IRF7910PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Свойство продукта Значение свойства
Turn On Delay Time 9.4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 22ns
Fall Time (Typ) 6.3 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.015Ohm
Drain to Source Breakdown Voltage 12V
Dual Supply Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7910PBF Документы

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