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IRF7910TRPBF Технические параметры

Infineon Technologies  IRF7910TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 16 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Resistance 15MOhm
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Base Part Number IRF7910PBF
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 9.4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 22ns
Fall Time (Typ) 6.3 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7910TRPBF Документы

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