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IRF8010PBF Технические параметры

Infineon Technologies  IRF8010PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 260W Tc
Turn Off Delay Time 61 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 15Ohm
Voltage - Rated DC 100V
Current Rating 80A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 260W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 130ns
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 150 ns
Nominal Vgs 4 V
Height 8.763mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF8010PBF Документы

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