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IRF8513PBF Технические параметры

Infineon Technologies  IRF8513PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Supplier Device Package 8-SO
Number of Elements 2 Elements
Current - Continuous Drain (Id) @ 25℃ 8A 11A
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 15.5MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 2.4W
Base Part Number IRF8513PBF
Element Configuration Dual
Power Dissipation 2.4W
Power - Max 1.5W 2.4W
FET Type 2 N-Channel (Dual)
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 15.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 766pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 8A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 766pF
Recovery Time 23 ns
FET Feature Logic Level Gate
Drain to Source Resistance 22.2mOhm
Rds On Max 15.5 mΩ
Nominal Vgs 1.8 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF8513PBF Документы

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