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IRF8513TRPBF Технические параметры

Infineon Technologies  IRF8513TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 8A 11A
Number of Elements 2 Elements
Turn Off Delay Time 9.3 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 2.4W
Terminal Form GULL WING
Base Part Number IRF8513PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 1.5W
Power - Max 1.5W 2.4W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.5m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 766pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.0155Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 64A
Avalanche Energy Rating (Eas) 49 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF8513TRPBF Документы

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