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IRF8915TRPBF Технические параметры

Infineon Technologies  IRF8915TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Number of Elements 2 Elements
Turn Off Delay Time 7.1 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 18.3MOhm
Voltage - Rated DC 20V
Max Power Dissipation 2W
Current Rating 8.9A
Base Part Number IRF8915PBF
Element Configuration Dual
Свойство продукта Значение свойства
Power Dissipation 2W
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 18.3m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Rise Time 12ns
Fall Time (Typ) 3.6 ns
Continuous Drain Current (ID) 8.9A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF8915TRPBF Документы

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