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IRF9317TRPBF Технические параметры

Infineon Technologies  IRF9317TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 16A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 160 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 10.2MOhm
Terminal Position DUAL
Terminal Form GULL WING
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 19 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2820pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time 64ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Continuous Drain Current (ID) -16A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Avalanche Energy Rating (Eas) 330 mJ
Nominal Vgs -1.8 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF9317TRPBF Документы

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