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IRF9332PBF Технические параметры

Infineon Technologies  IRF9332PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9.8A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 73 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2006
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Свойство продукта Значение свойства
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 47ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 58 ns
Continuous Drain Current (ID) 9.8A
Threshold Voltage -1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Recovery Time 54 ns
Nominal Vgs -1.9 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF9332PBF Документы

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