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IRF9358TRPBF Технические параметры

Infineon Technologies  IRF9358TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 146 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF9358PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.7 ns
Свойство продукта Значение свойства
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.3m Ω @ 9.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 7.2ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 69 ns
Continuous Drain Current (ID) 9.2A
Threshold Voltage -1.8V
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0163Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 73A
Avalanche Energy Rating (Eas) 210 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.8 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF9358TRPBF Документы

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