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IRF9383MTRPBF Технические параметры

Infineon Technologies  IRF9383MTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22A Ta 160A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.1W Ta 113W Tc
Turn Off Delay Time 115 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position BOTTOM
Свойство продукта Значение свойства
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.9m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 2.4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7305pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 160ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0029Ohm
Drain to Source Breakdown Voltage -30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF9383MTRPBF Документы

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