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IRF9388TRPBF Технические параметры

Infineon Technologies  IRF9388TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V 20V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 19 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 12A, 20V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 57ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Fall Time (Typ) 66 ns
Continuous Drain Current (ID) 12A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 96A
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

IRF9388TRPBF Документы

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