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IRF9389TRPBF Технические параметры

Infineon Technologies  IRF9389TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6.8A 4.6A
Number of Elements 2 Elements
Turn Off Delay Time 17 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF9389
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 398pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 14ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 4.6A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 34A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF9389TRPBF Документы

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