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IRF9520NPBF Технические параметры

Infineon Technologies  IRF9520NPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 6.8A Tc
Number of Elements 1 Element
Turn Off Delay Time 28 ns
Packaging Tube
Series HEXFET®
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 480mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -100V
Max Power Dissipation 48W
Peak Reflow Temperature (Cel) 250
Current Rating -6.8A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 47ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 31 ns
Continuous Drain Current (ID) -6.8A
Threshold Voltage -4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 27A
Dual Supply Voltage -100V
Recovery Time 150 ns
Nominal Vgs -4 V
Height 15.24mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF9520NPBF Документы

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